Title :
Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces
Author :
Cheng, Kangguo ; Lee, Jinju ; Karl, Holger ; Lyding, Joseph W. ; Kim, Young-Kwang ; Kim, Young-Wug ; Suh, Kwang-Pyuk
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
fDate :
3/1/2002 12:00:00 AM
Abstract :
The effect of deuterium on hot-carrier reliability of fully processed 0.18 μm silicon-on-insulator (SOI) devices is investigated. The improvement of device lifetime by a factor of 30 is achieved by passivating the interface defects with deuterium instead of hydrogen. The hydrogen/deuterium isotope effect (γ), defined as the ratio of generation interface traps of a hydrogenated device to that of a deuterated one, shows strong dependence on the gate stress voltages (V gs). Increasing Vgs results in the decrease of γ. These results suggest that the breaking of Si-H(D) bonds by channel electrons through the vibrational heating mechanism may play an important role in the degradation of deep submicron SOI devices
Keywords :
MOSFET; electron traps; hot carriers; passivation; semiconductor device reliability; silicon-on-insulator; 0.18 micron; SOI transistors; Si-SiO2; channel electrons; deep submicron devices; deuterium passivation; device lifetime; gate stress voltages; generation interface traps; hot-carrier reliability; hydrogen/deuterium isotope effect; interface defects; vibrational heating mechanism; Deuterium; Electron traps; Heating; Hot carrier effects; Hot carriers; Hydrogen; Isotopes; Silicon on insulator technology; Stress; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
