Title :
Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers
Author :
Biellak, Stephen A. ; Fanning, C. Geoff ; Sun, Yan ; Wong, S. Simon ; Siegman, Anthony E.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
2/1/1997 12:00:00 AM
Abstract :
We present characterization and analysis of wide-stripe unstable resonator semiconductor lasers with reactive-ion-etched facets. The mirror facets have RMS roughnesses of only 3-5 mm. Laser beam quality and brightness performance are measured in terms of resonator structure and fabrication parameters. Lateral M2 values as low as 1.25 at five times threshold are found. This data is compared to that derived from a Huygen´s integral-beam propagation method simulation which includes appropriate physical and process-induced aberrations, and good agreement is found
Keywords :
III-V semiconductors; aberrations; aluminium compounds; gallium arsenide; gradient index optics; laser beams; laser cavity resonators; laser mirrors; laser stability; laser variables measurement; optical fabrication; quantum well lasers; sputter etching; GRINSCH-SQW laser; GaAs-AlGaAs; GaAs-AlGaAs structure; Huygen´s integral-beam propagation method simulation; MOCVD; RMS roughnesses; brightness performance; diffraction-limited unstable resonator; fabrication parameters; laser beam quality; lateral M2 values; mirror facets; physical aberrations; process-induced aberrations; reactive-ion-etched facets; reactive-ion-etched laser resonator; resonator structure; semiconductor lasers; wide-stripe unstable resonator semiconductor lasers; Diffraction; Laser beams; Laser modes; Laser theory; Lenses; Mirrors; Optical materials; Optical resonators; Semiconductor lasers; Sun;
Journal_Title :
Quantum Electronics, IEEE Journal of
