DocumentCode :
1256361
Title :
Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator
Author :
Cheng, Zhongyuan ; Chen, Xia ; Wong, C. Y. ; Xu, Ke ; Tsang, Hon Ki
Author_Institution :
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong
Volume :
4
Issue :
5
fYear :
2012
Firstpage :
1510
Lastpage :
1519
Abstract :
Theoretical and experimental studies of mid-infrared (mid-IR) suspended membrane waveguide (SMW) and suspended membrane ring (SMR) resonator are presented. An array of periodical holes beside the rib waveguide facilitates the local removal of buried oxide to form suspended membrane devices on silicon-on-insulator (SOI). The waveguide design is optimized in terms of hole size, etch depth, and bend radius to minimize device strain and optical loss. We calculate waveguide dimension to attain the wide low-dispersion ( \\pm 100 ps/nm/km) bandwidth for the wavelength range from 2.0 to 8.0 \\mu \\hbox {m} , and optical nonlinearity is also studied. The SMWs are fabricated on a commercial SOI wafer and characterized by an \\hbox {Er}^{3+} - \\hbox {Pr}^{3+} codoped fiber laser at 2.75 \\mu\\hbox {m} . Negligible bending losses are measured for a 40- \\mu\\hbox {m} radius bend. The minimum waveguide loss of 3.0 \\pm 0.7 dB/cm is measured experimentally. The SMR resonator has a quality factor ( Q ) of \\sim 10 000 and an extinction ratio of \\sim 13 dB in near-IR. In mid-IR, the resonator has a Q of \\sim 8100.
Keywords :
Dispersion; Finite element methods; Infrared spectra; Optical ring resonators; Optical waveguides; Scanning electron microscopy; Silicon on insulator technology; Mid-IR devices; dispersion; nonlinear; ring resonator; silicon-on-insulator; suspended membrane waveguide;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2012.2210700
Filename :
6256678
Link To Document :
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