DocumentCode :
1256396
Title :
Transfer matrix of a Dirac-like singularity of the dielectric permittivity
Author :
Boucher, Yann
Author_Institution :
ENIB RESO-C.P., Brest, France
Volume :
33
Issue :
2
fYear :
1997
fDate :
2/1/1997 12:00:00 AM
Firstpage :
265
Lastpage :
268
Abstract :
We derive the general expression, for TE-polarization, of the transfer matrix associated to a Dirac-like singularity of the dielectric permittivity. We show that this approach is successful in modeling quantum wells, as well as localized loss centers used for the “modal sculpturing” in semiconductor lasers. Its range of validity includes any discontinuity of finite length as long as its actual extension remains much inferior to the optical wavelength
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical susceptibility; permittivity; quantum well lasers; semiconductor device models; semiconductor heterojunctions; semiconductor lasers; semiconductor quantum wells; Dirac-like singularity; GaAs-AlGaAs; TE-polarization; dielectric permittivity; finite length discontinuity; localized loss centers; modal sculpturing; optical wavelength; quantum wells; semiconductor lasers; symmetrical quantum well; transfer matrix; Dielectrics; Electromagnetic propagation; Electromagnetic scattering; Genetic expression; Nonhomogeneous media; Optical films; Optical propagation; Partial differential equations; Permittivity; Symmetric matrices;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.552267
Filename :
552267
Link To Document :
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