Title :
Current-accelerated channel hot carrier stress of MOS transistors
Author :
Sah, Chih-Tang ; Neugroschel, A. ; Han, K.M.
Author_Institution :
Florida Solid-State Electron. Lab., Florida Univ., Gainesville, FL, USA
fDate :
1/22/1998 12:00:00 AM
Abstract :
A channel hot carrier current and the failure rate of n- and p-channel MOS transistors are both increased by one to two orders of magnitude by forward biasing the substrate or source pin junction. Correlations with the hydrogen-bond-breaking theory give a threshold kinetic energy of 3.06±0.05 eV for interface trap generation by hot carriers
Keywords :
MOSFET; electron traps; failure analysis; hot carriers; semiconductor device reliability; 3.01 to 3.11 eV; MOS transistors; current-accelerated channel hot carrier stress; failure rate; forward biasing; hydrogen-bond-breaking theory; interface trap generation; source pin junction; substrate pin junction; threshold kinetic energy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980194
