Title :
Effects of emitter dimensions on low-frequency noise in double-polysilicon BJTs
Author :
Chen, X.Y. ; Deen, M.J. ; Yan, Z.X. ; Schroter, M.
Author_Institution :
Dept. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
fDate :
1/22/1998 12:00:00 AM
Abstract :
Low frequency (LF) noise of self-aligned double-polysilicon bipolar process featuring high-speed transistors has been studied. In all BJTs, the LF noise is dominated by 1/f noise due to fluctuations in the number of carriers. The location of the LF noise sources is determined by a scaling technique
Keywords :
1/f noise; bipolar transistors; carrier density; elemental semiconductors; semiconductor device noise; silicon; 1/f noise; LF noise; Si; carrier number fluctuation; double-polysilicon BJTs; emitter dimensions; high-speed transistors; low-frequency noise; scaling technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980173
