Title :
Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs
Author :
Karim, M.A. ; Chauhan, Y.S. ; Venugopalan, S. ; Sachid, A.B. ; Lu, D.D. ; Nguyen, B.Y. ; Faynot, O. ; Niknejad, A.M. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
In this letter, we present a thermal network extraction methodology to characterize self-heating effect using two-port RF measurements. We show the technique of determining isothermal condition using only the self-heating (thermal) dominated range of the spectrum. We use a self-consistent self-heating extraction scheme using both the real and imaginary parts of drain port admittance parameters. Appropriate thermal network is investigated, and a large amount of temperature rise due to self-heating is confirmed for short channel silicon-on-insulator MOSFETs with ultrathin body and buried oxide.
Keywords :
MOSFET; radiofrequency measurement; silicon-on-insulator; Si; UTBB SOI MOSFET; drain port admittance parameters; isothermal condition; isothermal condition extraction; self-consistent self-heating extraction scheme; self-heating effect; short channel silicon-on-insulator MOSFET; thermal network; thermal network extraction methodology; two-port RF measurements; ultrathin body silicon-on-insulator metal-oxide-semiconductor field effect transistors; Frequency measurement; Isothermal processes; Logic gates; MOSFETs; Radio frequency; Temperature measurement; $S$ -parameters; ETSOI; MOSFET; RF measurement; UTBSOI; isothermal condition; self-heating; thermal network; ultrathin body (UTB) and buried oxide (BOX) (UTBB) silicon-on-insulator (SOI);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2205659
