Slightly-Doped Step-Like Electron-Blocking Layer in InGaN Light-Emitting Diodes

Author

Kuo, Yen-Kuang ; Wang, Tsun-Hsin ; Chang, Jih-Yuan ; Chen, Jen-De

Author_Institution

Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan

Volume

24

Issue

17

fYear

2012

Firstpage

1506

Lastpage

1508

Abstract

In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.

Keywords

III-V semiconductors; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; InGaN; electron confinement; hole injection; light emitting diodes; multiple quantum well light emitting diode; slightly doped step like electron blocking layer; Aluminum gallium nitride; Doping; Electron optics; Gallium nitride; Light emitting diodes; Performance evaluation; Power generation; Electron-blocking layer; InGaN; light-emitting diodes (LEDs); multiple-quantum well;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2207381

Filename

6256695