Title :
Spectral Evidence of Si Complexes in HVPE-Grown GaAs
Author :
Bohn, Matthew J. ; Guiney, William ; Lynch, Candace ; Bliss, David F.
Author_Institution :
Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
Evidence of Si complexes was discovered in low temperature photoluminescence (PL) spectra recorded from GaAs grown by hydride vapor phase epitaxy and were measured as a function of secondary HCl flow. In addition, time resolved PL of the samples measured long radiative lifetimes, substantiating the excellent quality of the crystalline growth.
Keywords :
III-V semiconductors; crystal growth from vapour; gallium arsenide; radiative lifetimes; silicon; vapour phase epitaxial growth; GaAs-Si; crystalline growth; gallium arsenide; hydride vapor phase epitaxy; low temperature photoluminescence spectra; radiative lifetime; secondary HCl flow; silicon complex; Crystals; Epitaxial growth; Gallium arsenide; Photoluminescence; Silicon; GaAs; HVPE; orientationally patterned; photoluminescence; ultrafast;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2011.2160300
