DocumentCode :
1256624
Title :
Ultrawideband biasing of MMIC distributed amplifiers using improved active load
Author :
Robertson, Ian D. ; Aghvami, Hamid
Author_Institution :
Dept. of Electron. & Electr. Eng., King´s Coll., London Univ., UK
Volume :
27
Issue :
21
fYear :
1991
Firstpage :
1907
Lastpage :
1909
Abstract :
An improved technique is presented for biasing FETs in ultrawideband circuits, such as the GaAs MMIC distributed amplifier. The technique uses an improved active load, which has a DC operating characteristic that is controlled by a resistor chain. The improved active load has been applied to a 0.5-13 GHz monolithic distributed active signal combiner. The circuit gives excellent bandwidth, and is insensitive to the DC bias voltages.
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; wideband amplifiers; 0.5 to 13 GHz; DC operating characteristic; FET biasing; GaAs; MMIC; SHF; active load; active signal combiner; distributed amplifiers; monolithic microwave IC; resistor chain; ultrawideband circuits;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19911184
Filename :
98840
Link To Document :
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