Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories

Author

Suhane, Amit ; Arreghini, Antonio ; Van den Bosch, Geert ; Vandelli, Luca ; Padovani, Andrea ; Breuil, Laurent ; Larcher, Luca ; De Meyer, Kristin ; Van Houdt, Jan

Author_Institution

Imec, Leuven, Belgium

Volume

31

Issue

9

fYear

2010

Firstpage

936

Lastpage

938

Abstract

We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the initial programmed state. We extend the analysis to band-engineered tunneling barriers, demonstrating that the performance improvement in these devices lies more on the enhancement of hole current rather than that of the electron one.

Keywords

charge measurement; random-access storage; TANOS-like nonvolatile memories; TANVaS memories; band-engineered tunneling barriers; charge configuration; direct charge measurement; electrons; erase transient; erase voltage; hole current; Charge carrier processes; Charge measurement; Current measurement; Flash memory; Logic gates; Nonvolatile memory; Performance analysis; Programming; Quantum computing; SONOS devices; Silicon compounds; Transient analysis; Tunneling; Voltage; Carrier separation; TANOS; TANVaS; VariOT; erase transient;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2055824

Filename

5523881