Title :
Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer
Author :
Lv, Hangbing ; Wan, Haijun ; Tang, Tingao
Author_Institution :
Microelectron. Dept., Fudan Univ., Shanghai, China
Abstract :
Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/CuxO/Cu structure, by introducing a thin phase-change Ge2Sb2Te5 (GST) film between CuxO and Al top electrode, the device exhibits much better resistive hysteresis and switching uniformity. A combined filamentary conduction model is proposed to clarify the role of GST layer on the resistive switching stabilization.
Keywords :
aluminium; antimony compounds; copper compounds; germanium compounds; random-access storage; Al-CuxO-Cu; Ge2Sb2Te5; continuous resistive switching; resistive random access memory; resistive switching stabilization; resistive switching uniformity; thin phase-change film; Conducting materials; Copper; Crystals; Electrodes; Inorganic materials; Material storage; Microelectronics; Oxidation; Random access memory; Resistance; Switches; Tellurium; X-ray scattering; Confined filament; resistive random access memory (RRAM); resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2055534
