DocumentCode :
1256740
Title :
Boron redistribution during RTP formation of tungsten disilicide
Author :
Essaadani, A. ; Dupuy, J.C. ; Marjan, M.
Author_Institution :
Lab. de Phys. de la Matiere, INSA Lyon, Villeurbanne, France
Volume :
27
Issue :
21
fYear :
1991
Firstpage :
1916
Lastpage :
1918
Abstract :
Boron redistribution during WSi2 formation from a boron implanted Si
Keywords :
boron; chemical interdiffusion; diffusion in solids; incoherent light annealing; integrated circuit technology; metallisation; tungsten compounds; 850 degC; B redistribution; IC metallisation; RTP formation; SIMs profiling; Si:B; W sputtering deposition; W-Si:B; W-WSi 2 interface; WSi 2 formation; annealing time; diffusion;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19911190
Filename :
98846
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1256740
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