Title :
Determining intrinsic noise parameters of 0.25 mu m gate pseudomorphic HEMT
Author :
Taylor, R.1. ; Brookbanks, D.M. ; Holden, A.J.
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
An accurate equivalent circuit of a pseudomorphic HEMT (PM-HEMT) has been used, together with physically realistic values for the intrinsic PM-HEMT noise parameters (P, R, and C) to estimate the extrinsic noise parameters (minimum noise figure, optimum noise impedance, etc.) of a 0.25 mu m gate PM-HEMT. It is demonstrated that good agreement with experiment can be obtained for the minimum noise figure, optimum noise impedance, and also noise resistance, over the frequency range 6-18 GHz.
Keywords :
electron device noise; high electron mobility transistors; random noise; semiconductor device models; solid-state microwave devices; 0.25 micron; 6 to 18 GHz; equivalent circuit; extrinsic noise parameters; gate length; intrinsic noise parameters; minimum noise figure; noise model; noise resistance; optimum noise impedance; pseudomorphic HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911194
