DocumentCode
1256934
Title
MOS sine function generator using exponential-law technique
Author
Ishizuka ; Tang, Zhen ; Matsumoto, Hirokazu
Author_Institution
Dept. of Electron. Eng., Miyazaki Univ., Japan
Volume
27
Issue
21
fYear
1991
Firstpage
1937
Lastpage
1939
Abstract
A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponential-law of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0.71% over an angular range of +or-360 degrees . Typical power consumption is less than 1 mu W and the bandwidth is greater than 100 kHz.
Keywords
CMOS integrated circuits; function generators; linear integrated circuits; 0 to 100 kHz; 1 muW; 100 kHz; MOS sine function generator; MOS sine generator; PSPICE simulations; bandwidth; circuit configuration; exponential-law of MOS transistors; exponential-law technique; power consumption; subthreshold region; total harmonic distortion;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911202
Filename
98858
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