Damage in silicon caused by magnetron ion etching and its recovery effect

Author

Hirai, Minoru ; Iwakuro, Hiroaki ; Ohno, Jun-Ichi ; Kuroda, Tsukasa

Author_Institution

Shindengen Electr. Manuf. Co. Ltd., Saitama, Japan

Volume

13

Issue

4

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

629

Lastpage

632

Abstract

Damage in silicon exposed to magnetron plasma has been investigated. The damage was characterized by Schottky barrier height measurements. The depths of the damaged layers were determined as a function of radio frequency (RF) power. It was found that the damaged layer at RF power of 2 kW (self-bias; 270 V) is about 12 nm, and that the damage depths correlate with the self-bias voltage, which is a measure of the energy of ions impinging on the Si surface during plasma exposure. Several methods for removal of the damaged layer have been examined; wet Si etching was found to be the most suitable one

Keywords

Schottky effect; elemental semiconductors; ion beam effects; silicon; sputter etching; 2 kW; 270 V; Schottky barrier height measurements; Si surface; damaged layer depth; magnetron ion etching; magnetron plasma; plasma exposure; radio frequency power; recovery effect; self-bias voltage; semiconductors; Etching; Magnetic flux; Plasma applications; Plasma chemistry; Plasma measurements; Radio frequency; Semiconductor films; Silicon; Surface contamination; Surface discharges;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.62571

Filename

62571