Title :
Damage in silicon caused by magnetron ion etching and its recovery effect
Author :
Hirai, Minoru ; Iwakuro, Hiroaki ; Ohno, Jun-Ichi ; Kuroda, Tsukasa
Author_Institution :
Shindengen Electr. Manuf. Co. Ltd., Saitama, Japan
fDate :
12/1/1990 12:00:00 AM
Abstract :
Damage in silicon exposed to magnetron plasma has been investigated. The damage was characterized by Schottky barrier height measurements. The depths of the damaged layers were determined as a function of radio frequency (RF) power. It was found that the damaged layer at RF power of 2 kW (self-bias; 270 V) is about 12 nm, and that the damage depths correlate with the self-bias voltage, which is a measure of the energy of ions impinging on the Si surface during plasma exposure. Several methods for removal of the damaged layer have been examined; wet Si etching was found to be the most suitable one
Keywords :
Schottky effect; elemental semiconductors; ion beam effects; silicon; sputter etching; 2 kW; 270 V; Schottky barrier height measurements; Si surface; damaged layer depth; magnetron ion etching; magnetron plasma; plasma exposure; radio frequency power; recovery effect; self-bias voltage; semiconductors; Etching; Magnetic flux; Plasma applications; Plasma chemistry; Plasma measurements; Radio frequency; Semiconductor films; Silicon; Surface contamination; Surface discharges;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
