Title :
InGaAs-GaAs-AlGaAs strained-layer distributed feedback ridge waveguide quantum well heterostructure laser array
Author :
Miller, Lauren M. ; Beernink, K.J. ; Verdeyen, J.T. ; Coleman, J.J. ; Hughes, John S. ; Smith, G.M. ; Honig, J. ; Cockerill, T.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Strained-layer DFB ridge waveguide laser arrays, requiring only a single MOCVD growth step, exhibit phase-locked emission in the highest order supermode. Uncoated 14 element arrays with CW threshold current of 110 mA and eta ext=36% emit in a single longitudinal mode to above 190 mA. Peak pulsed and CW output powers are 400 mW and 53 mW, respectively.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor laser arrays; 110 to 190 mA; 36 percent; 400 mW; 53 mW; CW output powers; CW threshold current; DFB ridge waveguide laser arrays; InGaAs-GaAs-AlGaAs; MOCVD growth step; highest order supermode; phase-locked emission; pulse power; semiconductors; single longitudinal mode; strained-layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911205
