DocumentCode
1256995
Title
InGaAs-GaAs-AlGaAs strained-layer distributed feedback ridge waveguide quantum well heterostructure laser array
Author
Miller, Lauren M. ; Beernink, K.J. ; Verdeyen, J.T. ; Coleman, J.J. ; Hughes, John S. ; Smith, G.M. ; Honig, J. ; Cockerill, T.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
27
Issue
21
fYear
1991
Firstpage
1943
Lastpage
1945
Abstract
Strained-layer DFB ridge waveguide laser arrays, requiring only a single MOCVD growth step, exhibit phase-locked emission in the highest order supermode. Uncoated 14 element arrays with CW threshold current of 110 mA and eta ext=36% emit in a single longitudinal mode to above 190 mA. Peak pulsed and CW output powers are 400 mW and 53 mW, respectively.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor laser arrays; 110 to 190 mA; 36 percent; 400 mW; 53 mW; CW output powers; CW threshold current; DFB ridge waveguide laser arrays; InGaAs-GaAs-AlGaAs; MOCVD growth step; highest order supermode; phase-locked emission; pulse power; semiconductors; single longitudinal mode; strained-layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911205
Filename
98861
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