Title :
Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors
Author :
Kim, Kangmin ; Kim, Youngmin
Author_Institution :
Samsung Electron., Asan, South Korea
Abstract :
We present the intrinsic capacitance characteristics of a pentacene-based polystyrene-gate organic thin-film transistor (OTFT). Intrinsic capacitance values (CGD, CGS) at each terminal of the OTFT were experimentally measured for various frequencies and dc bias voltages. The measured results illustrate that the intrinsic capacitance of an OTFT can be understood by considering a charge control mechanism, suggesting the validity of Meyer´s capacitance model for the charge storage effect of OTFTs.
Keywords :
organic field effect transistors; thin film transistors; DC bias voltages; Meyer capacitance model; OTFT; charge control mechanism; charge storage effect; intrinsic capacitance characteristics; pentacene-based polystyrene-gate organic thin-film transistor; top-contact organic thin-film transistors; Capacitance; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Current measurement; Electrodes; Frequency measurement; Logic gates; Organic thin film transistors; Pentacene; Thin film transistors; Voltage; Overlap capacitance of source/drain (S/D); pentacene organic thin-film transistor (OTFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2055312
