Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs

Author

Liu, Zhi Hong ; Ng, Geok Ing ; Arulkumaran, Subramaniam

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

57

Issue

9

fYear

2010

Firstpage

2353

Lastpage

2357

Abstract

In this brief, we present a detailed study on the temperature dependence of the microwave noise characteristics in AlGaN/GaN high-electron mobility transistors on high-resistivity silicon substrate. The temperature-dependent microwave noise parameters of AlGaN/GaN HEMT on Si were measured over a wide temperature range of -50°C-200°C. The physical mechanisms of the temperature behavior for the overall noise figure (NF_min) and internal noise sources coefficients (P, R, and C) were analyzed and discussed in detail.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; AlGaN-GaN; HEMT; Si; high resistivity silicon substrate; high-electron mobility transistors; internal noise sources coefficients; overall noise figure; temperature -50 degC to 200 degC; temperature-dependent microwave noise parameters; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Microwave measurements; Noise; Noise figure; Noise measurement; Silicon; Temperature; Temperature dependence; Temperature distribution; Temperature measurement; GaN; high-electron mobility transistor (HEMT); noise; temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2054098

Filename

5523932