Title :
Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions
Author :
Shrivastava, Mayank ; Gossner, Harald ; Baghini, Maryam Shojaei ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
Abstract :
Time evolution of self-heating and current filamentation are discussed in this paper for shallow-trench-isolation (STI)-type drained-enhanced n-channel metal-oxide-semiconductor (DeNMOS) devices. A deeper insight toward regenerative n-p-n action and its impact over various phases of filamentation and the final thermal runaway is presented. A modified STI-type DeNMOS device is proposed in order to achieve an improvement (~2×) in the failure threshold (IT2) and electrostatic discharge (ESD) window (VT2). The performance and filament behavior of the standard device under charge-device-model-like ESD conditions is also presented, which is further compared with the proposed modified device.
Keywords :
MOSFET; electrostatic discharge; semiconductor device models; semiconductor device reliability; ESD; STI type DeNMOS device; charge device model; drained-enhanced n-channel metal-oxide-semiconductor devices; electrostatic discharge window; failure modeling; failure threshold; filament behavior; regenerative n-p-n action; self-heating filamentation; shallow-trench-isolation; space charge build-up; thermal runaway; three-dimensional filamentation; Biological system modeling; Current density; Electrostatic discharge; Electrostatic interference; Failure analysis; Heating; Humans; Junctions; Performance evaluation; Power system transients; Predictive models; Silicon; Solid modeling; Space charge; Temperature; Base push-out; charge device model (CDM); current filamentation; drain-enhanced metal–oxide–semiconductor (DeMOS); electrostatic discharge (ESD); human body model (HBM); input–output (I/O); kirk effect; laterally diffused metal–oxide–semiconductor (LDMOS); space charge build-up; thermal runaway; transient interferometric mapping (TIM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2055278
