• DocumentCode
    1257545
  • Title

    Behavioral models for noise in bipolar and MOSFET mixers

  • Author

    Hu, Yutao ; Mayaram, Kartikeya

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
  • Volume
    46
  • Issue
    10
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    1289
  • Lastpage
    1300
  • Abstract
    Frequency-domain behavioral models for noise in both bipolar and MOSFET mixers are presented. These models are developed from a linear time-varying analysis for mixer noise. No simulations are required as in the conventional approach, hence these models are very efficient. Good agreement is obtained between the behavioral models and the results from the simulation based approaches over a range of frequencies and processes. The limitations of the models have been identified and some improvements are suggested
  • Keywords
    MOSFET circuits; bipolar transistor circuits; circuit noise; circuit simulation; frequency-domain analysis; linear network analysis; mixers (circuits); time-varying networks; MOSFET mixers; bipolar mixers; frequency-domain behavioral models; linear time-varying analysis; mixer noise; Circuit noise; Circuit simulation; Frequency conversion; Frequency domain analysis; MOSFET circuits; Mixers; Noise figure; RF signals; Radio frequency; SPICE;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1057-7130
  • Type

    jour

  • DOI
    10.1109/82.799679
  • Filename
    799679