DocumentCode
1257545
Title
Behavioral models for noise in bipolar and MOSFET mixers
Author
Hu, Yutao ; Mayaram, Kartikeya
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
Volume
46
Issue
10
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
1289
Lastpage
1300
Abstract
Frequency-domain behavioral models for noise in both bipolar and MOSFET mixers are presented. These models are developed from a linear time-varying analysis for mixer noise. No simulations are required as in the conventional approach, hence these models are very efficient. Good agreement is obtained between the behavioral models and the results from the simulation based approaches over a range of frequencies and processes. The limitations of the models have been identified and some improvements are suggested
Keywords
MOSFET circuits; bipolar transistor circuits; circuit noise; circuit simulation; frequency-domain analysis; linear network analysis; mixers (circuits); time-varying networks; MOSFET mixers; bipolar mixers; frequency-domain behavioral models; linear time-varying analysis; mixer noise; Circuit noise; Circuit simulation; Frequency conversion; Frequency domain analysis; MOSFET circuits; Mixers; Noise figure; RF signals; Radio frequency; SPICE;
fLanguage
English
Journal_Title
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
Publisher
ieee
ISSN
1057-7130
Type
jour
DOI
10.1109/82.799679
Filename
799679
Link To Document