• DocumentCode
    1257569
  • Title

    Argon Microplasma Diagnostics by Diode Laser Absorption

  • Author

    Miura, Naoto ; Xue, Jun ; Hopwood, Jeffrey A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA, USA
  • Volume
    38
  • Issue
    9
  • fYear
    2010
  • Firstpage
    2458
  • Lastpage
    2464
  • Abstract
    The densities of argon excited states (1s3, 1s4, and 1s5) and the gas temperature of argon microplasma were measured by diode laser absorption. A 900-MHz microstrip split-ring resonator was used to excite the argon microplasma with gas pressures between 1 and 760 torr. The line-integrated excited-state densities and gas temperature of these states were estimated by the integrated absorption and broadening of the measured lineshapes, respectively. The excited-state densities were found to be minimum around 50 torr and increased with either decreasing or increasing pressure. The gas temperature increases from 300 K to 900 K as pressure increases from 1 to 760 torr.
  • Keywords
    argon; metastable states; plasma density; plasma diagnostics; plasma temperature; spectral line broadening; Ar; argon excited states; argon microplasma diagnostics; diode laser absorption; frequency 900 MHz; gas pressures; gas temperature; integrated absorption; line-integrated excited-state densities; lineshape broadening; microstrip split-ring resonator; pressure 1 torr to 760 torr; temperature 300 K to 900 K; Absorption; Argon; Density measurement; Diode lasers; Electrons; Laser excitation; Metastasis; Optical resonators; Plasma measurements; Plasma temperature; Semiconductor lasers; Temperature measurement; Argon metastable; atmospheric plasma; laser absorption; microplasma; microwave plasma;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2010.2053854
  • Filename
    5524007