DocumentCode :
1257773
Title :
Development of copper wire bonding application technology
Author :
Toyozawa, Kenji ; Fujita, Kazuya ; Minamide, Syozo ; Maeda, Takamichi
Author_Institution :
Sharp Corp., Nara, Japan
Volume :
13
Issue :
4
fYear :
1990
fDate :
12/1/1990 12:00:00 AM
Firstpage :
667
Lastpage :
672
Abstract :
The continuous forming of oxide-free, stable, spherical copper balls which has been realized by blowing a reducing gas over the copper wire during copper ball formation (sparkling) is described. The prevention of chip damage resulting from hard copper wire, including underpad cracking and silicon cratering, by the double-load wire bonding technology is discussed; this technology can minimize chip damage from wire bonding stress because the bonding load is decreased during ultrasonic power oscillation. It was confirmed that copper wires have a reliability equivalent to that of gold wires. The double-load wire bonding technology makes it possible to use copper wires in MOS LSI devices on a commercial basis
Keywords :
MOS integrated circuits; copper; integrated circuit technology; large scale integration; lead bonding; reliability; Cu wire bonding; IC chips; MOS LSI chips; chip damage; computer simulation; double-load wire bonding technology; oxide-free spherical Cu balls; pull test; reliability; sparkling; ultrasonic power oscillation; underpad cracking; Aluminum; Bonding; Copper; Gold; Large scale integration; Manufacturing; Semiconductor films; Silicon; Stress; Wire;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.62577
Filename :
62577
Link To Document :
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