Title :
110+ GHz Transimpedance Amplifier in InP-HBT Technology for 100 Gbit Ethernet
Author :
Fields, Charles H. ; Tsen, Tom ; McGuire, Chuck ; Yoon, Yeong ; Zehnder, Daniel ; Thomas, Steve ; Montes, Mary ; Valles, Irma ; Duvall, Janna ; Hussain, Tahir
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
Abstract :
A 50 dB-Ω transimpedance amplifier (TIA) with a bandwidth greater than 110 GHz has been demonstrated using InP HBT technology. The wide-band amplifier with a cutoff frequency > 110 GHz was designed and fabricated in HRL Laboratories´ G4 0.25 μm InP HBT IC technology. The amplifier operates at -4.0 V with a current draw of 76 mA for a power consumption of 304 mW. The basic Cherry-Hooper gain cell is used with a single-ended input and a differential output buffer stage.
Keywords :
III-V semiconductors; MMIC amplifiers; heterojunction bipolar transistors; indium compounds; local area networks; operational amplifiers; Cherry-Hooper gain cell; Ethernet; HBT technology; bit rate 100 Gbit/s; current 76 mA; differential output buffer stage; power 304 mW; transimpedance amplifier; High-speed integrated circuits; indium phosphide (InP); monolithic microwave integrated circuit (MMIC); transimpedance amplifier (TIA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2049007
