DocumentCode
1257870
Title
A Resist-Protection-Oxide Transistor With Adaptable Low-Frequency Noise for Stochastic Neuromorphic Computation in VLSI
Author
Chiu, Tang-Jung ; King, Ya-Chin ; Gong, Jeng ; Tsai, Yi-Hung ; Chen, Hsin
Author_Institution
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
32
Issue
9
fYear
2011
Firstpage
1293
Lastpage
1295
Abstract
Noise is found to play a beneficial rather than harmful role for neural computation. For example, the sensory neurons exploit stochastic resonance to enhance their sensitivity. This finding has inspired several neuromorphic systems attempting to use noise for computation. Nevertheless, an adaptable noise source is essential for taking the most advantages of noise. This letter presents a resist-protection-oxide (RPO) transistor, which is a defect-rich transistor between the drain implant and the gate. The RPO defects enhance greatly the low-frequency noise of the transistor. The noise level is further adaptable over two decades by the drain voltage. Moreover, the transistor is fully compatible with the standard CMOS logic technology without requiring additional masks or process steps. All the features underpin the development of stochastic neuromorphic computation in integrated circuits.
Keywords
field effect transistors; integrated circuit noise; resists; stochastic processes; CMOS logic technology; VLSI; adaptable low-frequency noise; adaptable noise source; defect-rich transistor; integrated circuit; neural computation; resist-protection-oxide field effect transistor; sensory neuron; stochastic neuromorphic computation; stochastic resonance; FETs; Implants; Logic gates; Low-frequency noise; Noise level; Defect screening; low-frequency noise; noise adaptability; resist protection oxide (RPO); stochastic computation;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2158384
Filename
5930320
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