DocumentCode :
1257870
Title :
A Resist-Protection-Oxide Transistor With Adaptable Low-Frequency Noise for Stochastic Neuromorphic Computation in VLSI
Author :
Chiu, Tang-Jung ; King, Ya-Chin ; Gong, Jeng ; Tsai, Yi-Hung ; Chen, Hsin
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
32
Issue :
9
fYear :
2011
Firstpage :
1293
Lastpage :
1295
Abstract :
Noise is found to play a beneficial rather than harmful role for neural computation. For example, the sensory neurons exploit stochastic resonance to enhance their sensitivity. This finding has inspired several neuromorphic systems attempting to use noise for computation. Nevertheless, an adaptable noise source is essential for taking the most advantages of noise. This letter presents a resist-protection-oxide (RPO) transistor, which is a defect-rich transistor between the drain implant and the gate. The RPO defects enhance greatly the low-frequency noise of the transistor. The noise level is further adaptable over two decades by the drain voltage. Moreover, the transistor is fully compatible with the standard CMOS logic technology without requiring additional masks or process steps. All the features underpin the development of stochastic neuromorphic computation in integrated circuits.
Keywords :
field effect transistors; integrated circuit noise; resists; stochastic processes; CMOS logic technology; VLSI; adaptable low-frequency noise; adaptable noise source; defect-rich transistor; integrated circuit; neural computation; resist-protection-oxide field effect transistor; sensory neuron; stochastic neuromorphic computation; stochastic resonance; FETs; Implants; Logic gates; Low-frequency noise; Noise level; Defect screening; low-frequency noise; noise adaptability; resist protection oxide (RPO); stochastic computation;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2158384
Filename :
5930320
Link To Document :
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