• DocumentCode
    1257877
  • Title

    Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With \\hbox {SiN}_{x} and </h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Choi, Hyun-Sik ; Jeon, Sanghun ; Kim, Hojung ; Shin, Jaikwang ; Kim, Changjung ; Chung, U-in</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Semicond. Device Lab., Samsung Electron. Corp., Yongin, South Korea</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>32</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>8</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2011</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1083</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1085</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>To verify the interface state properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with SiN<sub>x</sub> and SiO<sub>2</sub> gate dielectrics, the low-frequency noise (LFN) of various gate-length devices from 5 to 50 μm was measured and evaluated. Before LFN measurements, the dc characteristics, such as the subthreshold slope (<i>S</i>), were measured for comparison. The interface state density (<i>N</i><sub>it</sub>) extracted by <i>S</i> for an a-IGZO TFT with SiN<sub>x</sub> gate dielectrics is only 1.3 times higher than that for an a-IGZO TFT with SiO<sub>2</sub> gate dielectrics. However, the trap density (<i>Nt</i>) extracted by LFN for an a-IGZO TFT with SiN<sub>x</sub> gate dielectrics is almost 80 times higher than that for one with SiO<sub>2</sub> gate dielectrics. Moreover, carrier number fluctuations are the dominant mechanism for LFNs in an a-IGZO TFT with SiN<sub>x</sub> gate dielectrics. This large difference between SiN<sub>x</sub> and SiO<sub>2</sub> gate dielectrics in LFN measurement is related to the fast degradation of a-IGZO TFTs with SiN<sub>x</sub> gate dielectrics by the bias temperature instability or light illumination.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; noise measurement; silicon compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; LFN measurements; SiN<sub>x</sub>; SiO<sub>2</sub>; TFT; amorphous indium-gallium-zinc-oxide thin-film transistors; bias temperature instability; carrier number fluctuations; dc characteristics; gate dielectrics; interface state density; interface state properties; light illumination; low-frequency noise measurements; size 5 mum to 50 mum; trap density; Dielectric measurements; Dielectrics; Interface states; Logic gates; Noise; Thin film transistors; <formula formulatype=$ hbox{SiN}_{x}$ gate dielectrics; $ hbox{SiO}_{2}$ gate dielectrics; Amorphous indium–gallium–zinc–oxide (a-IGZO); carrier number fluctuations; interface state density $(N_{rm it})$ ; low-frequency noise (LFN); subthreshold slope $(S)$; trap density $(N_{t})$ ;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2158057
  • Filename
    5930321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1257877