مرکز منطقه ای اطلاع رساني علوم و فناوري - Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With <formula formulatype="inline"> <img src="/images/tex/17007.gif" alt="\\hbox {SiN}_{x}"> </formula> and <formula formulatype="inline"> <img src="/images/tex/16804.gif" alt="

Title :

Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With $\\hbox {SiN}_{x}$ and $</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Choi, Hyun-Sik ; Jeon, Sanghun ; Kim, Hojung ; Shin, Jaikwang ; Kim, Changjung ; Chung, U-in</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Semicond. Device Lab., Samsung Electron. Corp., Yongin, South Korea</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>32</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>8</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2011</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1083</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1085</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>To verify the interface state properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with SiN<sub>x</sub> and SiO<sub>2</sub> gate dielectrics, the low-frequency noise (LFN) of various gate-length devices from 5 to 50 μm was measured and evaluated. Before LFN measurements, the dc characteristics, such as the subthreshold slope (<i>S</i>), were measured for comparison. The interface state density (<i>N</i><sub>it</sub>) extracted by <i>S</i> for an a-IGZO TFT with SiN<sub>x</sub> gate dielectrics is only 1.3 times higher than that for an a-IGZO TFT with SiO<sub>2</sub> gate dielectrics. However, the trap density (<i>Nt</i>) extracted by LFN for an a-IGZO TFT with SiN<sub>x</sub> gate dielectrics is almost 80 times higher than that for one with SiO<sub>2</sub> gate dielectrics. Moreover, carrier number fluctuations are the dominant mechanism for LFNs in an a-IGZO TFT with SiN<sub>x</sub> gate dielectrics. This large difference between SiN<sub>x</sub> and SiO<sub>2</sub> gate dielectrics in LFN measurement is related to the fast degradation of a-IGZO TFTs with SiN<sub>x</sub> gate dielectrics by the bias temperature instability or light illumination.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; noise measurement; silicon compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; LFN measurements; SiN<sub>x</sub>; SiO<sub>2</sub>; TFT; amorphous indium-gallium-zinc-oxide thin-film transistors; bias temperature instability; carrier number fluctuations; dc characteristics; gate dielectrics; interface state density; interface state properties; light illumination; low-frequency noise measurements; size 5 mum to 50 mum; trap density; Dielectric measurements; Dielectrics; Interface states; Logic gates; Noise; Thin film transistors; <formula formulatype=$ $ hbox{SiN}_{x}$ gate dielectrics; $ hbox{SiO}_{2}$ gate dielectrics; Amorphous indium–gallium–zinc–oxide (a-IGZO); carrier number fluctuations; interface state density $(N_{rm it})$ ; low-frequency noise (LFN); subthreshold slope $(S)$; trap density $(N_{t})$ ;