• DocumentCode
    1257923
  • Title

    Particle-in-cell/Monte Carlo simulation of radio frequency SiH4/H2 discharges

  • Author

    Yan, Min ; Goedheer, Willem Jan

  • Author_Institution
    FOM Inst. for Plasma Phys., Nieuwegein, Netherlands
  • Volume
    27
  • Issue
    5
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    1399
  • Lastpage
    1405
  • Abstract
    In this paper we report on a study of SiH4/H2 radio-frequency discharges using the particle-in-cell/Monte Carlo (PIC/MC) method. A special procedure based on the rate balance for negative ions has been developed to speed up the simulation for this kind of electronegative discharge. The electron energy distribution function and the angular and energy distribution function of ions arriving at the substrate have been studied at different discharge settings (frequency, pressure, voltage, and power). The simulations show that the electrons are heated ohmically, so the average electron energy can be increased only by increasing the voltage. A high radical density, a high and more directional ion flux, and a low average ion energy can be obtained by a combination of a high frequency and a low RF voltage. The behavior of the dissociation rate with the discharge parameters is consistent with the experimentally observed consumption of SiH4. The simulated ion energy distribution functions are in good agreement with experimental results
  • Keywords
    Monte Carlo methods; high-frequency discharges; hydrogen neutral molecules; plasma CVD; plasma simulation; silicon compounds; RF discharges; RF voltage; SiH4; SiH4-H2; angular distribution function; average electron energy; average ion energy; directional ion flux; discharge parameters; discharge settings; electron energy distribution function; electronegative discharge; frequency; high frequency; ion energy distribution functions; negative ions; ohmic heating; ohmically heated electrons; particle-in-cell Monte Carlo simulation; plasma enhanced chemical vapour deposition; power; pressure; radical density; radio frequency SiH4-H2 discharges; rate balance; voltage; Chemical analysis; Chemical vapor deposition; Distribution functions; Electrons; Kinetic theory; Monte Carlo methods; Plasma chemistry; Radio frequency; Surface discharges; Voltage;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.799818
  • Filename
    799818