A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFT

Author

Lin, Ching-Wei ; Tseng, Chang-Ho ; Chang, Ting-Kuo ; Lin, Chiung-Wei ; Wang, Wen-Tung ; Cheng, Huang-Chung

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

23

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

133

Lastpage

135

Abstract

A novel process for fabricating self-aligned gate-overlapped LDD (SAGOLDD) poly-Si thin film transistors (TFTs) was demonstrated. Laser irradiation for dopant activation was performed from the backside of the quartz wafer. The graded LDD structure was naturally formed under the gate edges due to the lateral diffusion of the dopants during the laser activation. In comparison with the conventional laser-processed self-aligned poly-Si TFTs, the SAGOLDD poly-Si TFTs exhibited lower leakage current, suppressed kink effect, and higher reliability. Moreover, the proposed process was simple and very suitable for low-temperature processing.

Keywords

diffusion; elemental semiconductors; field effect integrated circuits; integrated circuit technology; laser materials processing; leakage currents; semiconductor device reliability; silicon; thin film transistors; SAGOLDD TFTs; Si; dopant activation; excimer laser irradiation; fabrication process; gate-overlapped LDD TFT; graded LDD structure; kink effect suppression; laser irradiation; laser-processed poly-Si TFT; lateral diffusion; leakage current reduction; low-temperature process; poly-Si thin film transistors; polysilicon TFTs; quartz wafer backside; reliability; self-aligned poly-Si TFT; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Integrated circuit reliability; Leakage current; Optical device fabrication; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.988815

Filename

988815