Title :
Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing
Author :
Kosugi, R. ; Suzuki, S. ; Okamoto, M. ; Harada, S. ; Senzaki, J. ; Fukuda, K.
Author_Institution :
Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
fDate :
3/1/2002 12:00:00 AM
Abstract :
The inversion channel mobility of 4H and 6H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been evaluated for its dependence on the re-oxidation annealing (ROA) conditions in a wet oxidizing ambient. The wet ambient was supplied by the pyrogenic reaction of hydrogen and oxygen gas (pyrogenic ROA), where the water vapor content (/spl rho/(H/sub 2/O)) was controlled by adjusting the hydrogen/oxygen gas flow rate. Not only the annealing temperature and the time, but also /spl rho/(H/sub 2/O) are found to be the critical parameters for improving channel mobility. As a result, field-effect channel mobilities as high as 47 cm/sup 2//Vs for 4H and 95 cm/sup 2//Vs for 6H-SiC MOSFETs were achieved by pryrogenic ROA treatment with a /spl rho/(H/sub 2/O) of 50%.
Keywords :
MOSFET; annealing; carrier mobility; oxidation; silicon compounds; water; wide band gap semiconductors; 4H-SiC MOSFETs; 6H-SiC MOSFETs; H/sub 2/; H/sub 2/O; O/sub 2/; ROA conditions; SiC; SiC MOSFET; SiC(0001); annealing temperature; annealing time; field-effect channel mobilities; field-effect transistors; hydrogen/oxygen gas flow rate; inversion channel mobility; pyrogenic ROA; pyrogenic oxidation; pyrogenic reaction; re-oxidation annealing conditions; water vapor content controlled; wet oxidizing ambient; Annealing; Electronics industry; FETs; Fluid flow; Hydrogen; MOSFETs; Oxidation; Power electronics; Research and development; Silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
