Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts

Author

Chow, T. Paul ; Baliga, B.Jayant ; Pattanayak, Deva N. ; Adler, Michael S.

Author_Institution

Gen. Electr. Co., Schenectady, NY, USA

Volume

11

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

184

Lastpage

186

Abstract

The performances of p-channel lateral insulated-gate bipolar transistors (LIGBTs) with and without collector shorts on n/sup -/ epi/n/sup +/ substrates are compared. The collector-shorted devices have a 4* improvement in turn-off time but about 1-V higher forward drop, due to a substantially reduced vertical current component. The addition of a buried layer on the emitter side increases the forward drop and reduces the turn-off time slightly for both types of LIGBTs. The presence of the collector shorts significantly improves the breakdown voltage but increases the percentage of the lateral current component, leading to a lower maximum gate controllable current.<>

Keywords

bipolar transistors; insulated gate field effect transistors; power transistors; LIGBTs; breakdown voltage; buried layer; collector shorts; forward drop; lateral current component; maximum gate controllable current; n/sup -/ epi/n/sup +/ substrates; p-channel lateral insulated-gate bipolar transistors; turn-off time; vertical current component; Circuits; Control systems; Insulated gate bipolar transistors; Insulation; Power electronics; Power generation; Research and development; Surface resistance; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.55244

Filename

55244