Title :
Investigation of the effect of a “cold” electron tail on trench charging
Author :
Converse, Mark C. ; Hitchon, W. Nick G
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fDate :
10/1/1999 12:00:00 AM
Abstract :
A kinetic simulation of electron and ion fluxes entering a trench has been employed to investigate the effect of the tail of the electron distribution on the self-consistent electrostatic potential distribution developed in a trench structure. The results indicate that the electron tail is probably not critical and that the low energy part of the distribution function of the ions may be the most significant component in determining the potentials developed in the trench
Keywords :
elemental semiconductors; plasma materials processing; plasma sheaths; plasma simulation; plasma temperature; semiconductor technology; silicon; sputter etching; Si; cold electron tail; distribution function; electron distribution; electron fluxes; electron tail; ion fluxes; kinetic simulation; polycrystalline Si; potentials; self-consistent electrostatic potential distribution; trench charging; trench structure; Distribution functions; Electrons; Etching; Kinetic theory; Plasma temperature; Probability distribution; Silicon; Tail; Temperature dependence; Temperature distribution;
Journal_Title :
Plasma Science, IEEE Transactions on
