Title :
Hot carrier-induced SOI MOSFET degradation under AC stress conditions
Author :
Lee, Jae-Ki ; Choi, Nag-Jong ; Hyun, Yun-Bong ; Yu, Chong-Gun ; Colinge, Jean-Pierre ; Park, Jong-Tae
Author_Institution :
Dept. of Electron. Eng., Incheon Univ., South Korea
fDate :
3/1/2002 12:00:00 AM
Abstract :
The hot-carrier-induced device degradation in partially depleted silicon-on-insulator (SOI) devices has been investigated under AC stress conditions. The device degradation of both floating-body SOI devices and body contacted SOI devices have been measured and analyzed for different AC stress frequencies and gate bias voltages. Possible degradation mechanisms are suggested.
Keywords :
MOSFET; hot carriers; impact ionisation; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; AC stress conditions; SOI CMOS process; SOI MOSFET; body contacted SOI devices; degradation mechanisms; enhancement-mode n-channel MOSFET; floating-body SOI devices; hot-carrier-induced device degradation; impact ionization; semiconductor device reliability; Degradation; Fluctuations; Frequency measurement; Hot carriers; MOS devices; MOSFET circuits; Resistors; Silicon on insulator technology; Stress measurement; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
