Title :
Integration of Edge-Emitting Laser Diodes With Dielectric Waveguides on Silicon
Author :
Famenini, Shaya ; Fonstad, Clifton G.
Author_Institution :
EECS Dept. & the Microsyst. Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Edge-emitting 1.55- platelet InGaAs/InP laser diodes are bonded in 6.5--deep recesses etched into a thick layer on an Si substrate so that they are aligned and coaxially coupled to SiON dielectric waveguides fabricated within the layer. The integrated lasers show room temperature pulsed and continuous wave (CW) lasing at threshold currents of 17 and 19 mA, respectively. The CW output power measured from the end of the dielectric waveguide at the edge of the chip is more than 1 mW, and laser-to-waveguide coupling losses under 2 dB are observed. CW spectral measurements show single-mode emission in the vicinity of 150 . The integrated structure is highly planar with a footprint of only 150 300 , and the integration process is modular and can be used to integrate a variety of devices on the same substrate.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optics; optical couplers; optical waveguides; semiconductor lasers; silicon; silicon compounds; InGaAs-InP; Si; SiON; continuous wave lasing; current 17 mA; current 19 mA; dielectric waveguides; edge-emitting laser diodes; etching; integrated lasers; laser-to-waveguide coupling losses; single mode emission; temperature 293 K to 298 K; threshold currents; wavelength 1.55 mum; Bonding; Diode lasers; Optical waveguides; Semiconductor lasers; Silicon; Substrates; Waveguide lasers; Complementary metal–oxide–semiconductor (CMOS) compatible photonics; infrared laser diodes; integrated optoelectronics; photonic integrated circuits (PIC); photonics integration;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2211344
