Title :
Low threshold, high power, vertical-cavity surface-emitting lasers
Author :
Geels, R.S. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
By optimising mirror reflectivities number of quantum wells, and mirror doping record continuous wave (CW) output power levels and low threshold currents have been achieved. Broad area devices yielded >12 mW CW and >500 mW pulsed, 6 mu m devices gave submilliampere threshold currents and output power >1 mW and 10 mu m devices showed output power >3 mW with a threshold of 1.5 mA.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; 1 mW; 1.5 mA; 12 mW; 3 mW; 500 mW; Al 0.2Ga 0.8As-In 0.2Ga 0.8As; CW output power; broad area devices; low threshold currents; mirror doping; mirror reflectivities; pulsed output power; quantum wells; submilliampere threshold currents; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911229
