• DocumentCode
    1258126
  • Title

    Low threshold, high power, vertical-cavity surface-emitting lasers

  • Author

    Geels, R.S. ; Coldren, Larry A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    27
  • Issue
    21
  • fYear
    1991
  • Firstpage
    1984
  • Lastpage
    1985
  • Abstract
    By optimising mirror reflectivities number of quantum wells, and mirror doping record continuous wave (CW) output power levels and low threshold currents have been achieved. Broad area devices yielded >12 mW CW and >500 mW pulsed, 6 mu m devices gave submilliampere threshold currents and output power >1 mW and 10 mu m devices showed output power >3 mW with a threshold of 1.5 mA.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; 1 mW; 1.5 mA; 12 mW; 3 mW; 500 mW; Al 0.2Ga 0.8As-In 0.2Ga 0.8As; CW output power; broad area devices; low threshold currents; mirror doping; mirror reflectivities; pulsed output power; quantum wells; submilliampere threshold currents; vertical-cavity surface-emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911229
  • Filename
    98885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1258126