DocumentCode
1258128
Title
A 0.2-μm, 1.8-V, SOI, 550-MHZ, 64-b PowerPC microprocessor with copper interconnects
Author
Aipperspach, Anthony G. ; Allen, David H. ; Cox, Dennis T. ; Phan, Nghia V. ; Storino, Salvatore N.
Author_Institution
IBM Corp., Rochester, MN, USA
Volume
34
Issue
11
fYear
1999
fDate
11/1/1999 12:00:00 AM
Firstpage
1430
Lastpage
1435
Abstract
A 550-MHz 64-b PowerPC processor in 0.2-um silicon-on-insulator (SOI) copper technology achieves a 22% frequency gain over a similar design in a CMOS bulk technology. Performance gains are 15%-40% at the circuit level, 24%-28%, for critical paths. Unique SOI design aspects such as history effect, lowered noise margins, parasitic bipolar current, and self-heating are considered
Keywords
CMOS digital integrated circuits; integrated circuit design; integrated circuit noise; microprocessor chips; silicon-on-insulator; 0.2 micron; 1.8 V; 550 MHz; 64 bit; CMOS bulk technology; Cu; IC interconnects; PowerPC microprocessor; SOI; SOI design aspects; Si; critical paths; history effect; noise margins; parasitic bipolar current; performance gains; self-heating; CMOS technology; Clocks; Copper; Delay; Frequency; Integrated circuit technology; Microprocessors; Silicon on insulator technology; Voltage; Wiring;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.799846
Filename
799846
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