Resistive Programmable Through-Silicon Vias for Reconfigurable 3-D Fabrics

Author

Sacchetto, Davide ; Zervas, Michael ; Temiz, Yuksel ; De Micheli, Giovanni ; Leblebici, Yusuf

Author_Institution

Lab. of Microelectron. Syst., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

Volume

11

Issue

1

fYear

2012

Firstpage

8

Lastpage

11

Abstract

In this letter, we report on the fabrication and characterization of titanium dioxide (TiO₂)-based resistive RAM (ReRAM) cointegration with 380 μm-height Cu through-silicon via (TSV) arrays for programmable 3-D interconnects. Nonvolatile resistive switching of Pt/TiO₂ /Pt thin films is first characterized with a resistance ratio up to five orders of magnitude. Then, cointegration of Pt/TiO₂/Pt or Pt/TiO₂ memory cells on 140 and 60 μm diameter Cu TSVs is fabricated. Repeatable nonvolatile bipolar switching of the ReRAM cells is demonstrated for different structures.

Keywords

copper; integrated circuit interconnections; platinum; random-access storage; three-dimensional integrated circuits; titanium compounds; 3D interconnects; Pt-TiO₂-Cu; ReRAM; TSV arrays; fabrication; reconfigurable 3D fabrics; resistive RAM; resistive programmable through-silicon vias; size 140 mum; size 380 mum; size 60 mum; Copper; Electrodes; Materials; Resistance; Switches; Three dimensional displays; Through-silicon vias; 3-D integration; Memristive systems; memristor; resistive RAM (ReRAM); through-silicon via (TSV); titanium dioxide ${rm (TiO_2}$);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2011.2160557

Filename

5930369