DocumentCode
1258224
Title
Rapid thermal hydrogen passivation of polysilicon MOSFETs
Author
Batra, S. ; Park, K. ; Banerjee, Sanjay ; Kwong, D. ; Tasch, Al ; Rodder, Mark ; Sundaresan, R.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume
11
Issue
5
fYear
1990
fDate
5/1/1990 12:00:00 AM
Firstpage
194
Lastpage
196
Abstract
The effectiveness of rapid thermal annealing as a passivation technique using Si/sub 3/N/sub 4/ as a solid source of H is discussed. Polysilicon MOSFETs with an on/off ratio of 10/sup 7/ can be obtained through rapid thermal hydrogen passivation, compared to an on/off ratio of 10/sup 6/ after furnace passivation. The improvement of subthreshold slope, threshold voltage, and channel transconductance compared to unpassivated MOSFETs is greater for rapid thermal annealing (RTA) than for furnace passivation.<>
Keywords
annealing; insulated gate field effect transistors; passivation; channel transconductance; on/off ratio; passivation technique; polysilicon MOSFETs; rapid thermal annealing; subthreshold slope; threshold voltage; Furnaces; Grain boundaries; Hydrogen; Implants; MOSFETs; Passivation; Random access memory; Rapid thermal annealing; Silicon; Solids;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.55247
Filename
55247
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