Title :
Spin tunneling heads above 20 Gb/in2
Author :
Mao, Sining ; Nowak, Janusz ; Song, Dian ; Kolbo, Paul ; Wang, Lei ; Linville, Eric ; Saunders, Doug ; Murdock, Ed ; Ryan, Pat
Author_Institution :
Seagate Technol., Bloomington, MN, USA
Abstract :
Spin tunneling recording heads above 20 Gb/in2 have been fabricated using a bottom tunneling junction stack. The spin tunneling stack is made of Ta/PtMn/CoFe/Ru/CoFe/AlO/NiFe/Ta and stabilized by a permanent magnet abutted junction. The effective junction width is about 0.4 μm wide and lapped to the junction with an optimum stripe height. The barrier has resistance area product of 15-20 Ωμm2, leading to a typical head resistance of around 50 Ω. Isolated pulses during the spin-stand test shows large signal up to 10 mV. On track error rate floor is better than 10-9 and the head signal-to-noise ratio is also better than that of. a conventional spin valve GMR head. The areal density estimated (using BER of 10-5) is above 20 Gb/in2.
Keywords :
digital magnetic recording; error statistics; giant magnetoresistance; magnetic heads; magnetoresistive devices; micromagnetics; tunnelling magnetoresistance; 0.4 micron; 10 mV; 50 ohm; BER; TGMR; Ta-PtMn-CoFe-Ru-CoFe-AlO-NiFe-Ta; bottom tunneling junction stack; head SNR; head signal-to-noise ratio; micromagnetic modeling; permanent magnet abutted junction; recording heads; spin tunneling heads; tunneling GMR; tunneling valve; Electrodes; Error analysis; Giant magnetoresistance; Magnetic heads; Magnetic shielding; Magnetic tunneling; Permanent magnets; Perpendicular magnetic recording; Spin valves; Testing;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2002.988915
