Title :
Unified characterization of two-region gate bias stress in submicrometer p-channel MOSFETs
Author :
Tang, Yuan ; Kim, Dae M. ; Lee, Yung-Huei ; Sabi, Babak
Author_Institution :
Oregon Graduate Center, Beaverton, OR, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
P-channel MOSFETs stressed at a given drain voltage over the entire range of device saturation, 0 V>
Keywords :
carrier lifetime; insulated gate field effect transistors; semiconductor device models; device degradation behavior; device lifetime; device saturation; drain voltage; parameter shift; phenomenological model; polarity; stress regions; submicrometer p-channel MOSFETs; two-region gate bias stress; two-region gate stress model; Charge carrier processes; Current measurement; Degradation; Electrodes; Hot carriers; MOSFETs; Stress; Voltage;
Journal_Title :
Electron Device Letters, IEEE
