Title :
Ultra-submicrometer-gate AlGaAs/GaAs HEMTs
Author :
Han, Jaeheon ; Ferry, David K. ; Newman, Peter
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMTs) that have gate lengths ranging from 25 to 85 nm and were fabricated using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy are discussed. These devices show that velocity overshoot and short-gate geometry effects play an important role for the gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3*10/sup 7/ cm/s for a 30-nm HEMT.<>
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; 25 to 85 nm; AlGaAs-GaAs; HEMTs; effective saturated electron velocity; electron-beam lithographic techniques; epitaxial wafers; gate lengths; maximum intrinsic transconductance; molecular beam epitaxy; short-gate geometry; ultra-submicrometre gate; velocity overshoot; Chromium; Electrons; Gallium arsenide; Geometry; Gold; HEMTs; MODFETs; Molecular beam epitaxial growth; Resists; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
