Ultra-submicrometer-gate AlGaAs/GaAs HEMTs

Author

Han, Jaeheon ; Ferry, David K. ; Newman, Peter

Author_Institution

Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA

Volume

11

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

209

Lastpage

211

Abstract

Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMTs) that have gate lengths ranging from 25 to 85 nm and were fabricated using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy are discussed. These devices show that velocity overshoot and short-gate geometry effects play an important role for the gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3*10/sup 7/ cm/s for a 30-nm HEMT.<>

Keywords

III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; 25 to 85 nm; AlGaAs-GaAs; HEMTs; effective saturated electron velocity; electron-beam lithographic techniques; epitaxial wafers; gate lengths; maximum intrinsic transconductance; molecular beam epitaxy; short-gate geometry; ultra-submicrometre gate; velocity overshoot; Chromium; Electrons; Gallium arsenide; Geometry; Gold; HEMTs; MODFETs; Molecular beam epitaxial growth; Resists; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.55252

Filename

55252