Field-implant-free isolation by double-well split drive-in

Author

Zeller, Ch. ; Mazuré, C. ; Kerber, M.

Author_Institution

Siemens AG, Munich, West Germany

Volume

11

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

215

Lastpage

217

Abstract

A double-well CMOS concept well suited to conventional and state-of-the-art isolation techniques is presented. Sufficient field doping is achieved by solely distributing the well drive-in thermal budget before and after field oxidation. Segregation effects, in particular dopant loss in the p-well, are compensated. At the same time the body factor and parasitic capacitances are kept low. The split drive-in approach makes channel-stop implants and corresponding lithography steps superfluous. The field doping adjustment is self-aligned, a very significant advantage in submicrometer regime processing.<>

Keywords

CMOS integrated circuits; integrated circuit technology; semiconductor doping; body factor; dopant loss; double-well CMOS concept; double-well split drive-in; field doping; field oxidation; isolation techniques; p-well; parasitic capacitances; segregation effects; submicrometer regime processing; well drive-in thermal budget; Boron; CMOS technology; Doping; Implants; Laboratories; Leakage current; Lithography; Oxidation; Parasitic capacitance; Research and development;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.55254

Filename

55254