Title :
Sense amplifier signal margins and process sensitivities [DRAM]
Author :
Laurent, Duane G.
Author_Institution :
Embedded DRAM Design Group, STMicroelectronics Inc., Carrollton, TX, USA
fDate :
3/1/2002 12:00:00 AM
Abstract :
A method for determining the signal margins of a sense amplifier based on the time required for the sense amplifier to achieve a given voltage separation is presented. The sense-time method generates a continuous curve whose peak value corresponds to the desired signal margin voltage and can be easily refined to provide additional precision. The method is illustrated by examining the behavior of a DRAM sense amplifier/bitline system with respect to the effects of imbalance in the parameters that most significantly affect its operation. The results of this study provide a link between the fluctuations inherent in integrated circuit processing technology and the variability of DRAM refresh times
Keywords :
CMOS memory circuits; DRAM chips; MOSFET; amplifiers; fluctuations; integrated circuit technology; CMOS process; DRAM refresh time variability; DRAM sense amplifier/bitline system; continuous curve; fluctuations; integrated circuit processing technology; parameter imbalance; process sensitivities; sense amplifier; sense-time method; signal margin voltage; signal margins; voltage separation time; Capacitors; Fluctuations; Integrated circuit technology; Operational amplifiers; Rails; Random access memory; Signal design; Signal generators; Signal processing; Threshold voltage;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
