Dielectric layers for RF-MEMS switches: Design and study of appropriate structures preventing electrostatic charging

In this work we present results from an experimental study on the physico-chemical and electrical properties of thin dielectric layers (SiO_xN_y) deposited using a plasma assisted process. An application of those dielectric layers in RF-MEMS switches is aimed at. We look for a better understanding of dielectric charging phenomenon as it is known to be the main cause for the failure and low reliability in the actuation of RFMEMS switches. In order to improve the performance of dielectric layers used in RFMEMS we have tested a new concept: instead of elaborating new materials we assembled a dielectric multi-layer structure that gains from design rather than from composition. To achieve this we have started with a characterization of the mono-layers deposited singly. The multi-layer structure was found to be a promising candidate for suitable modulation of the conductive properties of the deposited dielectric layers for their use in RF-MEMS switches.