Carrier-induced differential refractive index in GaInAsP-GaInAs separate confinement multiquantum well lasers

Author

Jacquet, J. ; Brosson, P. ; Olivier, A. ; Perales, A. ; Bodere, A. ; Leclerc, D.

Author_Institution

Lab. de Marcoussis, France

Volume

2

Issue

9

fYear

1990

Firstpage

620

Lastpage

622

Abstract

Measurements of subthreshold spectra on SCMQW (separate-confinement multiquantum-well) lasers with the number of wells varying from three to nine have led to the determination of the carrier-induced differential refractive index d mu /dN approximately -3.6*10/sup -20/. This value is 1.8 greater than in the case of conventional bulk lasers. This study allows for a better understanding of quantum well laser parameters such as the spectral linewidth enhancement factor. It is also useful for the design of tunable lasers.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser tuning; refractive index; semiconductor junction lasers; spectral line breadth; GaInAsP-GaInAs separate confinement multiquantum well; III-V semiconductors; carrier-induced differential refractive index; semiconductor laser design; spectral linewidth enhancement factor; subthreshold spectra; tunable lasers; Carrier confinement; Charge carrier density; Laser theory; Laser tuning; Optical refraction; Optical variables control; Quantum well lasers; Refractive index; Semiconductor lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.59330

Filename

59330