Title :
Carrier-induced differential refractive index in GaInAsP-GaInAs separate confinement multiquantum well lasers
Author :
Jacquet, J. ; Brosson, P. ; Olivier, A. ; Perales, A. ; Bodere, A. ; Leclerc, D.
Author_Institution :
Lab. de Marcoussis, France
Abstract :
Measurements of subthreshold spectra on SCMQW (separate-confinement multiquantum-well) lasers with the number of wells varying from three to nine have led to the determination of the carrier-induced differential refractive index d mu /dN approximately -3.6*10/sup -20/. This value is 1.8 greater than in the case of conventional bulk lasers. This study allows for a better understanding of quantum well laser parameters such as the spectral linewidth enhancement factor. It is also useful for the design of tunable lasers.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser tuning; refractive index; semiconductor junction lasers; spectral line breadth; GaInAsP-GaInAs separate confinement multiquantum well; III-V semiconductors; carrier-induced differential refractive index; semiconductor laser design; spectral linewidth enhancement factor; subthreshold spectra; tunable lasers; Carrier confinement; Charge carrier density; Laser theory; Laser tuning; Optical refraction; Optical variables control; Quantum well lasers; Refractive index; Semiconductor lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
