Title :
Low-temperature continuous-wave operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers on Si substrates
Author :
Egawa, T. ; Murata, Y. ; Jimbo, T. ; Umeno, M.
Author_Institution :
Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan
fDate :
7/1/1997 12:00:00 AM
Abstract :
An AlGaAs-GaAs multiquantum-well vertical-cavity surface-emitting laser (VCSEL) diode has been grown on a Si substrate using metalorganic chemical vapor deposition. The VCSEL structure grown on a Si substrate consists of ten quantum well active layers and a 23-pair of AlAs-Al/sub 0.1/Ga/sub 0.9/As distributed Bragg reflectors. The VCSEL on a Si substrate exhibited a threshold current of 82 mA and a threshold current density of 4.2 kA/cm/sup 2/ under continuous-wave (CW) conditions at 150 K. Electroluminescence observation showed that optical degradation is caused by the generation and growth of dark-line defects.
Keywords :
III-V semiconductors; aluminium compounds; current density; electroluminescence; gallium arsenide; laser reliability; quantum well lasers; semiconductor device reliability; semiconductor growth; silicon; surface emitting lasers; vapour phase epitaxial growth; 150 K; 82 mA; AlAs-Al/sub 0.1/Ga/sub 0.9/As; AlAs-Al/sub 0.1/Ga/sub 0.9/As distributed Bragg reflectors; AlGaAs-GaAs; AlGaAs-GaAs multiquantum-well vertical-cavity surface-emitting laser; Si; Si substrates; VCSEL structure; dark-line defects; electroluminescence; low-temperature continuous-wave operation; metalorganic chemical vapor deposition; optical degradation; quantum well active layers; threshold current; threshold current density; Chemical lasers; Chemical vapor deposition; Degradation; Diodes; Distributed Bragg reflectors; Electroluminescence; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
