DocumentCode :
1259383
Title :
Comparison of vertical-cavity surface-emitting lasers with half-wave cavity spacers confined by single- or double-oxide apertures
Author :
Oh, T.-H. ; Huffaker, D.L. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume :
9
Issue :
7
fYear :
1997
fDate :
7/1/1997 12:00:00 AM
Firstpage :
875
Lastpage :
877
Abstract :
Data are presented on vertical-cavity surface-emitting lasers (VCSEL´s) laterally confined with either single- or double-oxide apertures in a half-wave cavity spacer. Despite a higher nonradiative recombination rate, double aperture as compared to single-aperture devices show lower threshold current density and higher differential quantum efficiency for smaller optical modes. The advantage of double apertures is attributed to the better optical confinement that results in a reduced lateral diffraction loss.
Keywords :
current density; laser cavity resonators; laser modes; nonradiative transitions; oxidation; quantum well lasers; surface emitting lasers; AlAs-GaAs; AlGaAs-GaAs; InGaAs-GaAs; VCSEL; differential quantum efficiency; distributed Bragg reflectors; double-oxide apertures; half-wave cavity spacers; lasing characteristics; lateral confinement; lateral diffraction loss; nonradiative recombination rate; optical confinement; optical modes; single-oxide apertures; threshold current density; vertical-cavity surface-emitting lasers; Apertures; Laser modes; Optical losses; Optical refraction; Optical resonators; Optical scattering; Optical variables control; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.593329
Filename :
593329
Link To Document :
بازگشت