Comparison of vertical-cavity surface-emitting lasers with half-wave cavity spacers confined by single- or double-oxide apertures

Author

Oh, T.-H. ; Huffaker, D.L. ; Deppe, D.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

875

Lastpage

877

Abstract

Data are presented on vertical-cavity surface-emitting lasers (VCSEL´s) laterally confined with either single- or double-oxide apertures in a half-wave cavity spacer. Despite a higher nonradiative recombination rate, double aperture as compared to single-aperture devices show lower threshold current density and higher differential quantum efficiency for smaller optical modes. The advantage of double apertures is attributed to the better optical confinement that results in a reduced lateral diffraction loss.

Keywords

current density; laser cavity resonators; laser modes; nonradiative transitions; oxidation; quantum well lasers; surface emitting lasers; AlAs-GaAs; AlGaAs-GaAs; InGaAs-GaAs; VCSEL; differential quantum efficiency; distributed Bragg reflectors; double-oxide apertures; half-wave cavity spacers; lasing characteristics; lateral confinement; lateral diffraction loss; nonradiative recombination rate; optical confinement; optical modes; single-oxide apertures; threshold current density; vertical-cavity surface-emitting lasers; Apertures; Laser modes; Optical losses; Optical refraction; Optical resonators; Optical scattering; Optical variables control; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593329

Filename

593329