Title :
Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 μm
Author :
Baba, T. ; Fujita, P. ; Sakai, A. ; Kihara, M. ; Watanabe, R.
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
fDate :
7/1/1997 12:00:00 AM
Abstract :
We have obtained pulsed lasing operation in 2-5-μm diameter microdisk injection lasers using GaInAsP-InP compressively-strained multiple-quantum-well (MQW) wafers around room temperature. The effective cavity volume of the 2-μm-diameter device is the smallest among those for any type of electrically-pumped lasers. The threshold current of this device was as low as 0.2 mA. Cavity modes in emission spectra observed under CW conditions coincide well with theoretically predicted whispering gallery modes. Further reduction of diameter to less than 1.5 μm will realize the condition for spontaneous emission almost coupling into a single mode, which results in thresholdless lasing operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; spontaneous emission; 0.2 mA; 2 to 10 mum; CW conditions; GaInAsP-InP; GaInAsP-InP compressively-strained multiple-quantum-well wafer; GaInAsP-InP strained quantum-well microdisk injection lasers; cavity modes; effective cavity volume; electrically-pumped lasers; emission spectra; pulsed lasing operation; spontaneous emission; threshold current; thresholdless lasing operation; whispering gallery modes; Laser modes; Laser theory; Optical pulses; Pulse compression methods; Quantum well devices; Quantum well lasers; Spontaneous emission; Temperature; Threshold current; Whispering gallery modes;
Journal_Title :
Photonics Technology Letters, IEEE
