• DocumentCode
    1259399
  • Title

    Formation of ferromagnetic submicron particles of MnAs and MnGa on GaAs substrates by ion implantation

  • Author

    Ando, K. ; Chiba, A. ; Tanoue, H. ; Kirino, F. ; Tanaka, M.

  • Author_Institution
    Electrotech. Lab., Tsukuba, Japan
  • Volume
    35
  • Issue
    5
  • fYear
    1999
  • fDate
    9/1/1999 12:00:00 AM
  • Firstpage
    3463
  • Lastpage
    3465
  • Abstract
    Submicron room-temperature ferromagnets of MnAs and MnGa have been fabricated on GaAs semiconductor substrates by Mn+ ion implantation and subsequent heat treatment at 900°C under a controlled atmosphere. MnAs and MnGa particles are formed under nitrogen gas and forming (90%N2,10%H2) gas atmospheres, respectively. Their structural, magneto-optical and magnetic properties are characterized by superconducting quantum interference device magnetometry, magnetic circular dichroism spectroscopy, transmission electron microscopy, and atomic and magnetic force microscopies. The MnAs precipitates grow epitaxially on GaAs substrates and show an in-plane uniaxial magnetic anisotropy
  • Keywords
    atomic force microscopy; ferromagnetic materials; heat treatment; ion implantation; magnetic force microscopy; magnetic particles; magnetic thin films; manganese compounds; transmission electron microscopy; 900 C; GaAs; GaAs substrates; MnAs; MnGa; atomic force microscopies; ferromagnetic submicron particles; in-plane uniaxial magnetic anisotropy; ion implantation; magnetic circular dichroism; magnetic force microscopy; magnetic properties; magneto-optical properties; structural properties; superconducting quantum interference device magnetometry; transmission electron microscopy; Atmosphere; Atomic force microscopy; Gallium arsenide; Magnetic anisotropy; Magnetic devices; Magnetic force microscopy; Perpendicular magnetic anisotropy; Substrates; Superconducting magnets; Transmission electron microscopy;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.800558
  • Filename
    800558