Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors

Author

Yuan, Y. ; Brock, T. ; Bhattacharya, Pallab ; Caneau, C. ; Bhat, R.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

881

Lastpage

883

Abstract

We demonstrate a short-cavity edge-emitting 0.98-μm GaAs-based laser with semiconductor/air distributed Bragg reflector (DBR) mirrors made by reactive ion etching (RIE). The dc and small-signal modulation properties of 100-μm-long lasers have been measured and are characterized by I/sub th/=4.5 mA and f/sub -3dB/=30 GHz under pulsed conditions, respectively. The far-field pattern of light emanating from the DBR is also measured.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser mirrors; optical modulation; quantum well lasers; sputter etching; surface emitting lasers; 0.98 mum; 100 mum; 30 GHz; 4.5 mA; GaAs; InGaAs-AlAs-GaAs-AlGaAs-GaAs; RIE; dc modulation properties; edge-emitting lasers; far-field pattern; light-current characteristics; pulsed conditions; reactive ion etching; short-cavity edge-emitting GaAs-based laser; short-period semiconductor/air distributed Bragg reflector mirrors; small-signal modulation properties; tunneling injection MQW structure; Bandwidth; Chemical lasers; Distributed Bragg reflectors; Dry etching; Mirrors; Pulse measurements; Pulse modulation; Pulsed laser deposition; Reflectivity; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593332

Filename

593332