Wavelength shift of selectively oxidized Al/sub x/O/sub y/-AlGaAs-GaAs distributed Bragg reflectors

Author

MacDougal, Michael H. ; Dapkus, P.Daniel

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

9

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

884

Lastpage

886

Abstract

The effect of multiple oxidations on Al/sub x/O/sub y/-GaAs DBRs and Al/sub x/O/sub y/-AlGaAs-GaAs DBRs is investigated. With a compositionally graded AlGaAs layer, the oxide DBR remains stable under thermal stress, whereas without it, the DBR fractures. The stopband of the oxide DBR with the AlGaAs layer shifts when sequenced through multiple oxidation processes, which is attributed to the vertical oxidation of the AlGaAs. The resonance wavelength of a Fabry-Perot cavity containing an oxide DBR shifts 6 nm after 30 min of additional oxidation at 425/spl deg/C.

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mirrors; optical fabrication; oxidation; reflectivity; semiconductor-insulator boundaries; surface emitting lasers; thermal stability; 30 min; 425 C; AlO-AlGaAs-GaAs; DBR fracture; Fabry-Perot cavity; GaAs; VCSEL; compositionally graded AlGaAs layer; multiple oxidations; oxide DBR stability; reflectivity spectra; resonance wavelength; selectively oxidized Al/sub x/O/sub y/-AlGaAs-GaAs distributed Bragg reflectors; thermal stress; vertical oxidation; wavelength shift; Distributed Bragg reflectors; Gallium arsenide; Oxidation; Reflectivity; Resonance; Semiconductor lasers; Surface emitting lasers; Thermal stability; Thermal stresses; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.593333

Filename

593333